TPCP8206 Datasheet, Toshiba Semiconductor

(1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 19 mΩ (typ.) (VGS = 4.5 V) Low leakage current: IDSS = 10 µA (ma.

* Mobile Equipments 2. Features (1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on.